| 摘要 |
PURPOSE:To connect two adjacent bit lines each to a common sense amplifier by a method wherein two word lines are passed between a source region of a transfer transistor and a storage capacitor and one of them constitutes a gate electrode of the transfer transistor. CONSTITUTION:Two word lines WL11 and WL12 which are passed on memory cells arranged on the same column are arranged; they alternately constitute gate electrodes of transfer transistors Q11, Q12 of the memory cells. That is to say, one out of the two word lines WL11, WL12 at the upper part constitutes gate electrodes of MIS transfer transistors Q11, Q31,... of every other memory cell out of the memory cells on the same column; the other constitutes gate electrodes of transfer transistors Q2, Q4... of the remaining memory cells. Thereby, since two memory cells which are adjacent on the same column are selected by the different word lines WL11, WL12; two bit lines BL11; BL21 connected respectively to them can be connected to a common sense amplifier SIA. |
