| 摘要 |
PURPOSE:To reduce a disconnection of a bonding wire by a method wherein an opening part of a depth extended from the surface of an undercoat to a bonding pad part is formed in the undercoat. CONSTITUTION:A semiconductor device 28 is provided with the following: an interconnection 30 where a bonding pad part 30a has been installed; a passivation film 32 formed on the interconnection 30 successively; and a silicone- based resin undercoat 34. In this semiconductor device, an opening part 36 of a depth extended from the surface of the undercoat 34 to the bonding pad part 30a is formed in the undercoat 34. As a result, when the semiconductor device 28 is molded together with a bonding wire 20, the bonding wire 20 is not warped by both the undercoat 34 and a molding 26 but is warped only by the molding 26, and is not subjected to a thermal stress caused by a difference in thermal expansion between the undercoat 34 and the molding 26. Thereby, a disconnection of the bonding wire is reduced; a yield and reliability are enhanced. |
