| 摘要 |
1,268,335. Semi-conductor devices. R.C.A. CORPORATION. 30 July, 1970 [6 Aug., 1969], No. 36925/70. Heading HlK. A semi-conductor device comprises a bonding pad, associated with a semi-conductor component, upon a dielectric substrate, the pad having a first semi-conductor layer in contact with the substrate, a metal layer on the semiconductor layer, a wire bonded to the metal layer, and a conductor connecting the pad and, component. The device, which may be a read only memory, may be formed on a substrate of sapphire, spinel, beryllium oxide or zirconium oxide by providing a doped silicon or germanium layer on the substrate and masking, etching and doping to form a plurality of bonding areas 30 and of diodes in semi-conductor strips 18. An insulating layer 26, of silicon dioxide or nitride may be formed over the semi-conductor material remaining, and channels etched in this layer in order to enable later contact to be made to the diode. A metal layer 50, e.g. of aluminium, nickel or titanium is deposited over the substrate and etched to form pad areas, and connections 20 to the diodes via metal portions 52. A connection wire 24 may be bonded ultrasonically to the metal pad area, and to further pads formed integrally with the strips 18. The structure is aimed at improving adherence of metal areas of bonding pads to dielectric substrates. In an alternative embodiment the insulation layer of the pad may totally enclose the semiconductor material of the pad. The dopants may be boron and phosphorus. |
