| 摘要 |
PURPOSE:To contrive rapid and highly accurate mask alignment and form a resist pattern according to design specifications by performing mask alignment so that patterns to be aligned and alignment marks are arrayed almost to form a lattice on the plane. CONSTITUTION:Exposure and development are performed by using the 1st mask on a wafer to which a resist is applied and each pattern is formed. Then, after applying the resist onto the pattern, the 2nd mask is disposed so that the center line 4b of a pattern 1b to be aligned which is formed by transferring a mark 1a to be aligned onto the wafer and the center line 8a of an alignment mark 5a which is formed at the 2nd mask intersect at right angles each other. Then, the extent of overlapping between the pattern 1b and the mark 5a is extended and intervals a1-a4 between outer frames 2b and 6a as well as lines 4b and 8a are measured. When the quantity of shift is beyond tolerance, respective intervals are allowed to be within tolerance by moving the 2nd mask. After that, this approch makes the 2nd mask and the water come closely into contact and the prescribed resist pattern is formed. |
