| 发明名称 |
POWER MOSFET WITH A TEMPERATURE SENSOR |
| 摘要 |
<p>A temperature sensor (9) which is in thermal contact with the power MOSFET is also fitted in the housing (1) of a power MOSFET. The resistance of the sensor varies between two of its connections (A, K) as a function of the temperature of the power MOSFET. The two connections, which are fed out of the housing in addition to the connecting leads (3, 5, 7) assigned to the power MOSFET, are each connected to a connecting lead (4, 6). <IMAGE></p> |
| 申请公布号 |
EP0350015(A3) |
申请公布日期 |
1991.01.16 |
| 申请号 |
EP19890112292 |
申请日期 |
1989.07.05 |
| 申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
BRAUSCHKE, PETER, DIPL.-ING. (FH);SOMMER, PETER, BETRW./ING. |
| 分类号 |
H01L23/34;H01L23/495;H01L25/18;(IPC1-7):H01L23/34 |
主分类号 |
H01L23/34 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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