| 摘要 |
PURPOSE:To stably obtain high C/N by forming a recording film in such a manner that a Te or Te-Pd metal is formed near the boundary with a substrate, is gradually transformed to a metal oxide the furtherer from the boundary and is converted to a metal oxide in the outermost part. CONSTITUTION:The optical recording film is formed on the disk substrate 1 by being divided to 3 phases; 2, 3, 4 and is formed in the form of the Te or Te-Pd in the 2-phase part near the boundary with the substrate 1. The film is formed as the phase gradually transformed to the oxide of the Te or Te-Pd in the 3-phase part and is further formed as the phase of TeOx or TeOx-Pd in the 4-phase part. This recording film is formed by generating a plasma discharge in a vacuum chamber, sputtering the Te or Te-Pd metal to evaporate on the substrate 1 and introducing gaseous O2 into the chamber while sticking a metal crystal layer on the substrate, then gradually increasing the flow rate thereof. The sticking of H2O, N2, etc., in the chamber to the film is prevented in this way and the high C/N is stably obtd. |
