发明名称 CIRCUIT USING GATE TURN-OFF THYRISTOR
摘要 PURPOSE:To decrease the number of parts and the circuit loss and provide the high-speed response by a method wherein turn-off use limiting voltage of GTO thyristor is made equal to or greater than voltage between anode and cathode of the GTO thyristor at use state. CONSTITUTION:In V-1 characteristics of safety operation limiting region in high- current region, turn-off use limiting voltage VDRM is determined by voltage at intersection of current with zero axis and clamp voltage VAK is determined by voltage applied between anode and cathode in GTO cycle when the fall time is ended and the anode voltage comes to the steady state. Then VDRM>=VAK. By using the GTO cycle having the use limiting voltage VDRM equal to the clamp voltage VAK or more, large controllable current can be obtained even omitting a snubber circuit.
申请公布号 JPS57186977(A) 申请公布日期 1982.11.17
申请号 JP19810072051 申请日期 1981.05.13
申请人 HITACHI SEISAKUSHO KK 发明人 FUKUI HIROSHI;KIMURA ARATA;AMANO HISAO;YAO TSUTOMU
分类号 H02M1/06;H03K17/732 主分类号 H02M1/06
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