发明名称 SEMICONDUCTOR DEVICE, ITS MANUFACTURE AND LEAD FRAME USED THEREFOR
摘要 <p>PURPOSE:To prevent defect by short circuit when side faces of leads come into contact with each by a method wherein insulating layers are formed respectively at least at the side faces of inner parts or outer parts of the individual leads. CONSTITUTION:The following are provided: a silicon semiconductor pellet (pellet) 12; a tab 8 to which the pellet 12 has been bonded; a bonding layer 11 which bonds the pellet 12 to the tab 8; and a plurality of leads 9 which are arranged and installed around the tab 8. In addition, the following are provided: wires 13 whose both end-parts are bonded respectively to individual electrodes of the pellet 12 and the individual loads 9 so as ho be bridged; a package 14 used to resin-seal them. Insulating layers 10 are formed respectively at side faces of the leads 9. Thereby, it is possible to prevent defect by short circuit when the side faces of the leads come into contact with each other.</p>
申请公布号 JPH036051(A) 申请公布日期 1991.01.11
申请号 JP19890140879 申请日期 1989.06.02
申请人 HITACHI LTD;HITACHI YONEZAWA ELECTRON CO LTD 发明人 AZUMA HIROMICHI
分类号 H01L23/50 主分类号 H01L23/50
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