| 摘要 |
<p>1,271,155. Transistors. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 23 April, 1969 [23 April, 1968], No. 3691/71. Divided out of 1,271,154. Heading H1K. In a planar transistor, which may form part of the integrated capacitor memory described in Specification 1,271,154, from which the present application is divided, the capacitance of or in parallel with the collector junction is increased by provision of an additional region adjoining the base region. This region is directly connected to one of the base and collector regions and forms a PN junction with a part of the other region sandwiched between it and the one region. In Fig. 4, the region, 53, is formed in the same diffusion as the emitter region and overlies a thicker part 51a of the base region extending down to a low resistivity inclusion 4a forming part of the collector. In a modification the inclusion is absent and the base region of uniform thickness. One or more inclusions of the same type as region 53 may be formed in the surface of the base region and connected by conductive tracks to region 53. Finally in the lateral transistor shown in Fig. 6 with a frame-shaped collector and central emitter 83, the additional region 92, of the same conductivity type as the base is channel-shaped and overlaps the collector almost completely except on the side at which the collector electrode is attached. The surface passivation may be silicon nitride and/or oxide and in Fig. 6 the epitaxial base layer has a heavily doped lower section 103. The proximity of the additional part of the collector to the surface is advantageous where the photosensitivity of the collector junction is to be used.</p> |
