摘要 |
The method comprises depositing a first layer (10) consisting of a photoresist on a semiconductor substrate (12), and selectively exposing to light and developing said layer (10) to form a photoresist pattern (10) having at least one window, performing a first process to form a first part (16) of a device in the said window, blanket depositing a second layer (20) of a second resist, where said second resist is relatively insoluble in solvents dissolving said photoresist pattern (10) removing said photoresist pattern (10) and performing a second process to form a second part of a device in the area formerly covered by the photoresist pattern (10). …<??>The method substantially eliminates overlay errors. |