| 摘要 |
<p>A toroidal ECR reactor is described in which a poloidal magnetic field is established in a plasma generating chamber (40) in which a specimen to be processed is disposed on an electrode in a specimen chamber (30). Microwaves and gaseous reactants are introduced into the plasma generating chamber (40). A plasma discharge occurs in which high energy electrons are confined in a plasma source region extending between a magnetic mirror formed in the specimen chamber out of line-of-sight to the wafer(s) (50) when disposed on the electrode. A baffle region (61) formed between the two chambers prevents microwaves from entering the specimen chamber. The reactor is particularly suitable for etching or depositing films on semiconductor substrates, since the sensitive substrates are not exposed to the high energy ions and/or photons of the source region.</p> |
