| 摘要 |
<p>Method for producing field oxide for a silicon-base integrated circuit. According to the invention, the production method includes the following steps: a) thermal nitriding of the substrate (20) and/or of the native oxide which covers it, in order to form a nitrided layer (22) on its surface, b) deposition of a thin film (24) of silicon nitride on the nitrided layer, c) deposition of a thin layer (26) of silicon oxide on the nitride film, d) deposition of a thick layer (28) of silicon nitride on the oxide layer, e) anisotropic dry etching of the stack formed by the nitride layer, the oxide layer, the oxide film and the nitrided layer, to expose the areas of the substrate where the field oxide needs to be formed, then f) thermal oxidation of the structure obtained in e) in order to form field oxide in said areas.</p> |
