| 发明名称 |
SUBSTRATE USED FOR FABRICATION OF THICK FILM CIRCUIT |
| 摘要 |
For improvement in heat radiation capability without sacrifice of affinity for a paste, a substrate used for fabrication of a thick film circuit has a multi-level structure having a foundation (1) of an aluminum nitride and a surface film (2) provided on the foundation, and the surface film is formed of an oxygen compound containing silicon atoms. |
| 申请公布号 |
EP0327068(A3) |
申请公布日期 |
1991.01.09 |
| 申请号 |
EP19890101743 |
申请日期 |
1989.02.01 |
| 申请人 |
MITSUBISHI METAL CORPORATION |
发明人 |
KUROMITSU, YOSHIRO C/O MITSUBISHI;YOSHIDA, HIDEAKI C/O MITSUBISHI;TANAKA, CHUJI C/O MITSUBISHI;UCHIDA, HIROTO C/O MITSUBISHI;MORINAGA, KENJI |
| 分类号 |
H01L23/15;H05K1/03;H05K1/09;H05K3/38;(IPC1-7):H01L23/14 |
主分类号 |
H01L23/15 |
| 代理机构 |
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