发明名称 |
Surface acoustic wave device. |
摘要 |
<p>Disclosed herein is a surface acoustic wave device (1) using a substrate (4) which comprises a single-crystalline dielectric member (2) and a piezoelectric thin film (3) epitaxially grown thereon. An aluminum electrode (5) defining an interdigital electrode is formed along the interface between the dielectric member (2) and the piezoelectric thin film (3). This aluminum electrode (5) is formed of an aluminum film which is crystallographically oriented in a constant direction, whereby stressmigration of the aluminum electrode (5) is suppressed while enabling epitaxial growth of the piezoelectric thin film (3) over the entire surface thereof.</p> |
申请公布号 |
EP0407163(A2) |
申请公布日期 |
1991.01.09 |
申请号 |
EP19900307292 |
申请日期 |
1990.07.04 |
申请人 |
MURATA MANUFACTURING CO., LTD. |
发明人 |
IEKI, HIDEHARU;SAKURAI, ATSUSHI;KIMURA, KOJI |
分类号 |
H03H9/02;H03H3/08;H03H9/145 |
主分类号 |
H03H9/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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