| 摘要 |
An output sensor of a charge transfer device includes a well region of a second conductivity type having a low impurity concentration and formed in the surface area of a semiconductor substrate of a first conductivity type. A charge-sensing buried channel region of the first conductivity type is formed in part of the surface area of the well region, and a gate electrode is formed on the charge-sensing buried channel region via a gate insulation film. Further, source and drain regions of the second conductivity type are disposed on both sides of the charge-sensing buried channel region in a width direction thereof to constituted a charge-sensing MOS transistor. The charge-sensing buried channel region is formed continuously with a charge-transfer buried channel region buried in the well region.
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