Static induction thyristor

摘要

A static induction thyristor having a mesh like gate region in front of the cathode, and between the gate region and the cathode a high resistance region having effective impurity concentration of 1011 cm-3-5x1014 cm-3 is interposed, and the voltage gain decided by the gate length, gate interval and the gate-to-anode distance is made 10 or more so that the forward voltage drop is small, providing high speed switching ability and a large reverse breakdown voltage.