| 摘要 |
A method of manufacturing a semiconductor device includes forming a base region and a collector region on an Si substrate, forming, on the base region, an emitter region of a semiconductor material having an energy gap larger than that of Si, forming an Si film on the emitter region, ion-implanting an element into a surface portion of the emitter region or at the interface of the emitter region and the Si film and a periphery portion of the interface, and simultaneously forming electrodes on the base and collector regions and on the Si film. A heterojunction bipolar transistor manufactured by the above method is also disclosed.
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