发明名称 |
Field effect transistor with multiple grooves |
摘要 |
A field effect transistor has an active layer containing a multi-step recess that becomes narrower as it approaches the substrate. A gate electrode is produced at the deepest portion of the recess section. The transistor may be produced by successively selectively etching the active layer and an overlying semiconductor surface protection film to produce a multi-step configuration recess, depositing a gate electrode at the bottom of the recess, and depositing source and drain electrodes on the active layer.
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申请公布号 |
US4984036(A) |
申请公布日期 |
1991.01.08 |
申请号 |
US19890367685 |
申请日期 |
1989.06.19 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHI |
发明人 |
SAKAMOTO, SHINICHI;SONODA, TAKUJI |
分类号 |
H01L21/306;H01L21/285;H01L21/338;H01L29/778;H01L29/812 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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