| 摘要 |
<p>PURPOSE:To obtain a semiconductor wafer whose strength is improved by putting the average surface roughness and the maximum surface roughness of irregularity, which arises at the chamfered part at the periphery of a semiconductor wafer, under the specified values. CONSTITUTION:This consists of the first process of mechanically polishing a semiconductor wafer and the periphery of the semiconductor wafer so as to do chamfering, the second process of etching the chamfered part in etchant, and the third process of mechanochemically polishing the chamfered part using polishing liquid and polishing cloth, and by improving the average value of the average surface roughness and the maximum surface roughness of microroughness at the chamfered part of a GaAs wafer up to the order of 500Angstrom or less, the layer denatured by processing is mostly removed. Moreover, it is to be desired that the average roughness Ra and the maximum surface roughness Rt should be, more preferably, Ra<=30Angstrom and Rt<=150Angstrom . As a result, the chamfered part becomes resistant to the shock from outside.</p> |
