发明名称 |
IMPROVED GROUP I-III-VI2 SEMICONDUCTOR FILMS FOR SOLAR CELL APPLICATION |
摘要 |
This invention relates to an improved thin film solar cell with excellent electrical and mechanical integrity. The device comprises a substrate, a Group I-III-VI2 semiconductor absorber layer and a transparent window layer. The mechanical bond between the substrate and the Group I-III-VI2 semiconductor layer is enhanced by an intermediate layer between the substrate and the Group I-III-VI2 semiconductor film being grown. The intermediate layer contains tellurium or substitutes therefor, such as Se, Sn, or Pb. The intermediate layer improves the morphology and electrical characteristics of the Group I-III-VI2 semiconductor layer. |
申请公布号 |
AU5814590(A) |
申请公布日期 |
1991.01.07 |
申请号 |
AU19900058145 |
申请日期 |
1990.06.07 |
申请人 |
INTERNATIONAL SOLAR ELECTRIC TECHNOLOGY, INC. |
发明人 |
BULENT M. BASOL;VIJAY K. KAPUR |
分类号 |
H01L31/0224;H01L31/032;H01L31/0336 |
主分类号 |
H01L31/0224 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|