Method of producing ferroelectric LiNb1-31 xTaxO30<x<1) thin film by activated evaporation

摘要

A method of producing a ferroelectric thin film comprising the steps of evaporating metal Li or an oxide thereof as a Li source, metal Nb or an oxide thereof as a Nb source and metal Ta or an oxide thereof as a Ta source in a substantially oxygen gas plasma atmosphere while controlling the respective heating temperatures independently from each other and simultaneously depositing the Li, Nb and Ta on a substrate so as to obtain an LiNb1-xTaxO3 (0<x<1) thin film which shows ferroelectricity.