| 摘要 |
PURPOSE:To capacitate two measurements by means of a single element by a method wherein a semiconductor is provided with four each or more ohmic electrodes and one each or more barrier electrodes and in case of measuring the magnetism, the hole effect is measured by the four electrodes while in case of measuring the radiation, the signal carriers produced in the semiconductor are collected making use of the barrier electrode and the ohmic electrode. CONSTITUTION:The ohmic electrodes 2-6 are respectively fixed to the faces and the four sides of the rectangular N type Si substrate 1 which is coated with the barrier metal comprising Au surrounding the electrode 5 mounted on one face. In the semiconductor radiation senser so far constituted, in case of measuring the magnetism, the hole effect is measured making use of the electrodes 2-5 while in case of measuring the radiation, the signal carriers produced in the substrate due to the radiation are collected in the depletion layer making use of the electrodes 7 and 6. Through these procedures, the magnetism and radiation at one point in air may be measured by means of a single element. |
