| 摘要 |
<p>A photoresist coating for use in microlithography comprises a polymer of a monomer of the formula <CHEM> wherein X and Y are strong electron withdrawing groups and R<4> is H or providing that X and Y are both -CN, R<4> may be aliphatic hydrocarbyl, aryl or alkaryl. Preferred monomers are of the formula <CHEM> wherein R<7> is a C1-C5 alkyl or C2-C5 alkenyl group, more particularly ethyl 2-cyanopenta-2,4-dienoate or allyl 2-cyanopenta-2,4-dienoate. Methods for applying a resist coating by vapour deposition of these monomers and exposure to radiation are described. A positive or negative tone image can be produced, depending upon the imaging method employed.</p> |
