FIELD-EFFECT TRANSISTOR,申请号JP19890134197-传众专利搜索

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发明名称	FIELD-EFFECT TRANSISTOR
摘要
申请公布号	JPH02312246(A)	申请公布日期	1990.12.27
申请号	JP19890134197	申请日期	1989.05.26
申请人	NEC CORP	发明人	KANAMORI MIKIO
分类号	H01L29/812;H01L21/338	主分类号	H01L29/812
代理机构		代理人
主权项
地址

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