Method for forming polycrystalline silicon contacts.

摘要

A method for fabricating integrated circuits is used to improve contacts between polycrystalline interconnect and underlying polycrystalline or monocrystalline silicon regions. After contact openings are formed, a layer of titanium (48) is deposited over the integrated circuit. The titanium is reacted in nitrogen to form a silicide layer only in the openings. Titanium nitride and unreacted titanium are then removed, and a layer of polycrystalline silicon (56) deposited and patterned. The silicide (50, 51, 52) layer between the polycrystalline interconnect and the underlying silicon ensures that a high quality contact is formed.