| 摘要 |
PURPOSE:To prevent the cutting part of an Al wiring from being short-circuited by a migration and the like by a method wherein after the wiring of a semiconductor device is corrected, the corrected part is covered with an insulating film. CONSTITUTION:An LSI chip, in which a cutting or the formation of a wiring is finished, is put in an atmosphere 73 containing tetra ethyl ortho silicate and ozone and the interior of a cut hole can be filled with an SiO2 film 74 by irradiating the hole with a laser beam 70 or an FIB (a focusing ion beam). Moreover, by scanning the laser beam 70 from the starting point of a wiring route to the end point of the wiring route, an SiO2 film 75 can be formed only on a wiring 72. This cutting, the formation of the wiring and the local film formation of the SiO2 film are repeated according to the need. Thereby, as the end part of the cutting part of the Al wiring is not exposed, there is no possibility that the wiring is short-circuited due to an electro- migration of Al and the like and moreover, as a connecting wiring formed by an FIBCVD method and a laser CVD method is not exposed, a possibility that the wiring is disconnected by a mechanical force at the time of assembly or a heating and the like in the air is eliminated. |
