Blanking aperture array, method of producing blanking aperture array, charged particle beam exposure apparatus and charged particle beam exposure method.

摘要

A blanking aperture array (1, 19A) for use in a charged particle beam exposure has a substrate (75, 110), at least m rows by n columns of apertures (2, 19c, AP) arranged two-dimensionally in the substrate, where each of the apertures have a pair of blanking electrodes (3a, 3b, 19a, 19b, E1, E2) and m and n are integers greater than one, and n m-bit shift registers (5, 19d) provided on the substrate for applying voltages dependent on pattern data to m pairs of the blanking electrodes of the apertures in the ith column, where i = 1, 2, ..., n. The pattern data is related to a pattern which is to be exposed using the blanking aperture array.