| 摘要 |
<p>A semiconductor integrated circuit device is disclosed having first and second conducting layers (110, 120), with the first layer having a shape which enhances field emission tunneling off of the surface thereof. A dual thickness dielectric layer (140) separates the conducting layers. When a potential difference is applied between the conducting layers, field emission tunneling occurs primarily through the thinner portion (101) of the dielectric layer. A method for forming a semiconductor integrated circuit device comprises the steps of (a) forming a first conducting layer (410), (b) forming regions of enhanced field emission on said first conducting layer, (c) forming a second insulating layer (450) on the first conducting layer, (d) forming a masking layer (460), (e) undercutting the second insulating layer, (f) etching the first conducting layer according to the masking pattern, (g) forming a third insulating layer (470) on all exposed surfaces of the first conducting layer, such that a resultant insulating layer has first and second regions of different thicknesses, and (h) forming a second conducting layer (411) over said resultant insulating layer.</p> |
