Diode used in reference potential generating circuit for DRAM.

摘要

A p-type impurity diffusion layer (2) is formed in a major surface region of an n-type silicon substrate (1). An insulating film (4) is formed on the substrate (1), and a contact hole (5) is formed in the insulating film (4) at a position corresponding to the impurity diffusion layer (2). An n-type polysilicon layer (8) is formed inside the contact hole (5). The p-type impurity diffusion layer (2) and the n-type polysilicon layer (8) constitute a diode. A p-n junction (9, 9 min ) of the diode is formed on the major surface of the substrate (1) or in the polysilicon layer (8) above the major surface.