| 摘要 |
Method of growing crystalline layers by vapour phase epitaxy A method of growing an epitxial crystalline layer on a substrate which comprises the steps of (a) providing in the reaction zone of a reaction vessel a heated substrate (b) establishing a gas stream, provided by a carrier gas which comprises at least 50% by volume of an inert gas, which contains, in the vapour phase, at least one alkyl of an element selected from Group Vb and Group VIb of the Periodic Table, (c) passing the gas stream through thre action zone into contact with the heated substrate, and (d) irradiating at least a major part of the surface of the substrate with electromagnetic radiation to provide photolytic decomposition of the at least one alkyl and consequential epitaxial deposition of the layer containing the said element across at least a major part of the surface of the substrate. |
