发明名称 SEMICONDUCTOR MEMORY HAVING REDUNDANCY BLOCK
摘要 PURPOSE: To make it possible to exchange a normal block with a redundant block by providing plural normal blocks having plural normal row and column lines and the redundant block having plural redundant row and column lines connected to plural redundant memory cells. CONSTITUTION: This device is provided with plural normal blocks NBL1 -NBL16 having plural normal rows and columns connected respectively to plural normal memory cells and the redundant block RBL having plural redundant rows and columns connected respectively to plural redundant memory cells. Further, the device is provided with a redundant precharge circuit connected to the redundant column line and plural normal precharge circuit connected to the normal column line, and a redundant sense amplifier connected to the redundant line and a normal sense amplifier connected to the normal column line are operated also by the same system as the redundant and normal precharge circuits. Thus, the normal block is exchanged with the redundant block.
申请公布号 JPH02310890(A) 申请公布日期 1990.12.26
申请号 JP19900056765 申请日期 1990.03.09
申请人 SANSEI ELECTRON CO LTD 发明人 KIYU HIYUN CHIYOI;HIYUN KUN BIYUN;YAN RIYUU RII;CHIYON KUN WA
分类号 G11C11/413;G11C11/40;G11C29/00;G11C29/04 主分类号 G11C11/413
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