发明名称 SEMICONDUCTOR MEMORY
摘要 <p>PURPOSE:To detect the potential change of a bit line at high speed by interposing a displacement transmitting means between the bit line and an inverter so that only the fluctuation of the bit line to the reference potential side of a potential can be transmitted to the inverter. CONSTITUTION:The input/output of an inverter In, which is a sense amplifier, is connected by a switching means SW and a capacity element C is interposed between the input terminal of the inverter In and the bit line. In such a case, by turning ON the switching means SW in an instant before reading, the input level of the inverter In can be biased to a threshold value. When a cell Mc is set in a conductive state, a current flows and a reference potential Vss is fluctuated for the potential of the bit line, the input level of the inverter In is fluctuated from the threshold value to the reference potential Vss side. Accordingly, the inverter In is speedily set in a state to output a signal corresponding to the stored contents of the cell Mc. Thus, the speed of reading operation can be extremely improved.</p>
申请公布号 JPH02310895(A) 申请公布日期 1990.12.26
申请号 JP19890134120 申请日期 1989.05.25
申请人 SONY CORP 发明人 MOCHIZUKI HIDENOBU
分类号 G11C17/00;G11C7/06;G11C7/14;G11C16/06;G11C16/26;H01L27/10 主分类号 G11C17/00
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