| 摘要 |
PURPOSE:To obtain the subject film capable of giving critical current density comparable to that for single crystal by heat treatment of the smooth first layer formed with an oxide superconducting material to provide this layer to have a crystal orientation followed by forming the second layer thereon under other film-forming conditions. CONSTITUTION:The smooth first layer consisting of an oxide material containing the same elements as those for the objective oxide superconducting material is formed on a substrate through a sputtering process. The first layer is then heat-treated to provide it to have a crystal orientation Thence, the second layer consisting of said oxide superconducting material is formed on the resultant first layer through a sputtering, laser ablation, vapor deposition, CVD or thermal decomposition process under film-forming conditions differing from those for forming the first layer.
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