发明名称 METHOD FOR WRITING TO MEMORY ELEMENT
摘要 <p>PURPOSE:To increase a writable time and to enable writing to a memory element without fail by not fixing the designation of a write area to an electrically erasable PROM (EEPROM) as the memory clement but changing the designation and providing redundancy in the write area. CONSTITUTION:As the memory element, an EEPROM 20d is used. In such a case, the designation of the write area for memory contents 20c is not fixed but changed by a random number and the redundancy is provided so that the write area can be free and have a space. For example, when there are N-blocks for the data area of n-bits in the EEPROM 20d, the data are written to he block, for which the area is designated, to be determined by the random number on the EEPROM 20d. Thus, the write time is increased and in comparison with back-up by a battery, the method for writing to the memory element can be obtained without fail at low cost.</p>
申请公布号 JPH02310896(A) 申请公布日期 1990.12.26
申请号 JP19890130077 申请日期 1989.05.25
申请人 CANON INC 发明人 OKITSU KATSUHIKO
分类号 G03B21/11;G11C16/02;G11C16/06;G11C17/00 主分类号 G03B21/11
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