| 摘要 |
PURPOSE:To obtain a bipolar MOS logic circuit operated at a small amplitude by controlling the emitter voltage of a bipolar transistor(TR) to secure hot carrier breakdown voltage of the MOSFET through the control of a voltage applied to the base. CONSTITUTION:When input signals Da-Dc all go to H level VH, that is, logical '1' in this logic circuit, an output signal Do goes to L level VL, that is, logical '0' selectively and the circuit acts like a NAND gate circuit satisfying equation I. The collector of the bipolar TR 1 is coupled to a ground level of the circuit via a load resistor R1 and its base receives a prescribed voltage VCS. Then the logic block comprising 3 MOSFETs TQ1-TQ3 is provided in series between the emitter of the TR T1 and the power supply voltage VSS as the basic building block. A signal fed to the MOSFET component causes a prescribed change in the drain current of the relevant MOSFET to have a sufficiently small signal amplitude. |
