| 摘要 |
PURPOSE:To contrive to reduce the occupying area of element and to reduce the size of an insulated gate field effect semiconductor device by a method wherein the source or drain region of the second MISFET is connected directly to the source or drain region of the first MISFET with the reverse conductive region. CONSTITUTION:The N<+> type semiconductor region 3, 4 and an N<+> type Si gate electrode 6 are provided in the region surrounded with SiO2 films 2 on the surface of a P type Si substrate 1, and an N channel MOSFET Q3 or Q4 is provided. A polycrystalline Si layer 7 for formation of the P channel MOSFET Q1 or Q2 is provided from the upper part of the film 2 being at the neighborhood of the MOSFET up to the position coming in contact directly with the drain region 3 of the FET Q3 or Q4. The P<+> type source region 8 and drain region 9 are provided in the layer 7 thereof. The reverse conductive type (N<+> type) region 12 is provided in the layer 7 in the condition coming in contact with the region 9, andf moreover connected directly to the region 3. A P-N junction diode D1 or D2 is formed by existence of the region 12 thereof between the region 9, and the regions 9, 3 are connected directly through the diode D1 or D2. |
