SEROTONIN DETECTION SENSOR

摘要

PURPOSE:To make the title sensor inexpensive and to enhance the capacity thereof by using a measuring pH-ISFET covered with a serotoninmonoamine oxidase immobilized film containing flavin. CONSTITUTION:A drain 2 and a source 2' are formed on a P<->-type silicon substrate and drain and source electrodes 5, 6 are formed thereto by vapor deposition. An SiO2 film 7 is formed to the surface of an element by thermal oxidation and an Si3N4 film is formed thereto by a CVD method. A serotoninmonoamine oxidase immobilized film 10 containing flavin reacting only with serotonin is provided and the part other than a gate part is molded by a resin mixture 9. This electrode is used as a detection electrode and an electrode having the same structure as said electrode but no serotoninmonoamine oxidase immobilized film 10 is used as a comparing electrode.