| 摘要 |
PURPOSE:To facilitate the formation of buried type memory cells in the turning up bit line system by a method wherein a switching element is composed of the memory cells formed on the left side surface of the poles and the memory cells formed on the right side surface of the poles alternately arranged. CONSTITUTION:A MOS (metal-oxide film-semiconductor) capacitor is composed of silicon poles 16 formed on a p-type silicon substrate 1, capacitor insulating films 5 and capacitor electrodes 6 formed on the lower sidewalls of the poles 16. Besides, the MOS structure comprising earth electrodes 8-insulating films 7-silicon poles 16 fills the role of channel isolation to avoid the running leakage current between n<+> type diffused layer 12 and n-type diffused layers 4 due to the parasitic MOS effect. Furthermore, a MOSFET is composed of gate insulating films 9 and gate electrodes 10 formed on the upper sidewalls of the silicon poles 16 as well as n<+> diffused layers 12 as source parts formed on the upper parts of the p-type silicon poles 16. Through these procedures, the MOSFET can be formed alternately with the right and left side surfaces of the silicon poles 16 thereby enabling the turning up bit line system to be adopted. |
