发明名称 Metallization layer structure formed on aluminum nitride ceramics and method of producing the metallization layer structure
摘要 A metallization layer structure includes an intermediate layer (15) formed on an aluminum nitride ceramics base (11). The intermediate layer contains aluminum titanium nitride. A titanium layer (12) is formed on the intermediate layer. A heat-resistant metallic layer (13) is formed on the titanium layer. A metallic layer (14) for facilitating soldering or brazing is formed on the heat-resistant metallic layer.
申请公布号 US4980239(A) 申请公布日期 1990.12.25
申请号 US19880235595 申请日期 1988.08.24
申请人 FUJITSU LIMITED 发明人 HARADA, SHIGEKI;SUGIMOTO, MASAHIRO
分类号 C23C14/06;C04B41/51;C04B41/52;C04B41/89;C23C14/14;C23C14/18;C23C14/58;H01L23/10;H05K1/03;H05K3/38 主分类号 C23C14/06
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