发明名称 |
Metallization layer structure formed on aluminum nitride ceramics and method of producing the metallization layer structure |
摘要 |
A metallization layer structure includes an intermediate layer (15) formed on an aluminum nitride ceramics base (11). The intermediate layer contains aluminum titanium nitride. A titanium layer (12) is formed on the intermediate layer. A heat-resistant metallic layer (13) is formed on the titanium layer. A metallic layer (14) for facilitating soldering or brazing is formed on the heat-resistant metallic layer. |
申请公布号 |
US4980239(A) |
申请公布日期 |
1990.12.25 |
申请号 |
US19880235595 |
申请日期 |
1988.08.24 |
申请人 |
FUJITSU LIMITED |
发明人 |
HARADA, SHIGEKI;SUGIMOTO, MASAHIRO |
分类号 |
C23C14/06;C04B41/51;C04B41/52;C04B41/89;C23C14/14;C23C14/18;C23C14/58;H01L23/10;H05K1/03;H05K3/38 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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