| 摘要 |
A solid state imaging element includes a first conductivity type semiconductor substrate, a light-electricity conversion section for generating electrical charges in response to incident light including a second conductivity type layer disposed in the semiconductor substrate, a charge storage section having a layer of the second conductivity type disposed in the substrate for storing signal charges from the light-electricity conversion, transfer section for transferring signal charges from the storatge section, a first conductivity type layer disposed at the surface of substrate over the light-electricity conversion section and the charge storage section, and a light shielding film covering the transfer section wherein the concentration of dopant impurities in the charge storage section is higher than that in the light-electricity conversion section.
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