PHOTORESISTS FORMED BY POLYMERIZATION OF DI-UNSATURATED MONOMERS

摘要

PHOTORESISTS FORMED BY POLYMERISATION OF DI-UNSATURATED MONOMERS A photoresist coating for use in microlithography comprises a polymer of a monomer of the formula V wherein X and Y are strong electron withdrawing groups and R4 is H or, providing that X and Y are both -CN, R4 may be aliphatic hydrocarbyl, aryl or alkaryl. Preferred monomers are of the formula Va wherein R7 is a C1-C5 alkyl or C2-C5 alkenyl group, more particularly ethyl 2-cyanopenta-2,4-dienoate or allyl 2-cyanopenta-2,4-dienoate. Methods for applying a resist coating by vapour deposition of these monomers and exposure to radiation are described. A positive or negative tone image can be produced, depending upon the imaging method employed.