| 摘要 |
PURPOSE:To measure strain even at high temperature by joining a semiconductor material to the surface of a body to be measured, and detecting optical elastic fringes formed by an infrared-ray optical elastic method. CONSTITUTION:To a body 3 to be measured such as an electrode substrate, a semiconductor material 1 of silicon, etc., is joined by using a joining material 2 of solder, etc. Infrared rays from an infrared-ray source 4 pass through a polarizing plate 5 and a quarter-wavelength plate 6 to strike the semiconductor material at right angles. since the infrared rays are transmitted through the semiconductor material, they are reflected by the connecting material 2, and then passed through a quarter-wavelength plate 7 and a polarizing plate 8 to form an image. An image of a fringe pattern by an optical elastic effect is formed on the semiconductor material by adjusting the angles of the polarizing plates and quarter-wavelength plates, thus measuring the strain distribution of the body to be measured and the size of strain. Those measurements are taken even in the stages of cooling and heating in the manufacture of a semiconductor elements and even an extremely small part is measured. |
