发明名称 SEMICONDUCTOR THIN FILM FORMING DEVICE
摘要 <p>PURPOSE:To enable sharp hetero interface formation and also to make hydride gas harmless by providing a plurality of molecular beams for thermal decomposition for one kind of hydride gas inside a vacuum vessel. CONSTITUTION:Phosphin from a phosphin bomb 1 through a mass flow controller 2 is thermally decomposed at high efficiency of 99% or more at the high temperature main cracker cell 5 of a vacuum vessel 4 through a valve 3 opened, and phosphorous molecular beams are applied to an InP substrate 6 opposed to a cell 5. And when the valve 3 is closed and a valve 10 is opened and at the same time a valve 11 is opened and a valve 9 is closed, the arsenic beams by arsine from an arsine bomb 7 through a cell 5 are applied to the substrate 6 in place of phosphorous beams. At the same time, the phosphorous molecules beams by a low temperature of sub cracker cell 14 provided in the vessel 4 does not have facing substrate, and those are exhausted by a vacuum pump 12, and since the decomposing efficiency of the cell 5 is high, removing device 13 is made harmless, and since the changeover time of gas by the cell 5 is short, sharp hetero interface is formed at the substrate.</p>
申请公布号 JPH02308519(A) 申请公布日期 1990.12.21
申请号 JP19890130383 申请日期 1989.05.24
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 SUGIURA HIDEO;IGA RYUZO;YAMADA TAKESHI
分类号 H01L21/203;B01D53/46;C30B23/08 主分类号 H01L21/203
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