| 摘要 |
PURPOSE: To provide a good heat trnasmission at the same depressing degree with the pressure used for etching or manufacturing method by using a cooling or heating gas which plays a role as a processing gas component when cooling a semiconductor wafer in a plasma etching device. CONSTITUTION: At cooling a semiconductor wafer in a plasma etching device, one or more kinds of component of a processing gas used for plasma etching process is used as a gas conductive heat transmission gas. With at least a part of a component of one kind or more of the precutting gas made contacted to the surface of the semiconductor wafer, a heat is transferred from the wafer into the device, then to a heat sink positioned adjoining the wafer for heat transmission. With the same depressing degree as the pressure used with a plasma etching method or other semiconductor manufacturing method, good heat transmission is obtained.
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