| 摘要 |
<p>PURPOSE:To avoid the generation of a leak current between an upper-layer metal and a lower-layer metal and to prevent the breakage of a second metallic film due to its step by embedding the lower-layer metal consisting of the first metallic film and wiring in the opening of a mask film. CONSTITUTION:The insulating mask film 14 is formed over the entire surface of a transparent substrate 12 and photoetched to form an opening. The first metallic film 18 and a coating film 20 having an almost flat surface are then formed over the entire surface, the coating film 20 is etched until the first metallic film 18 is exposed, and the first metallic film 18 is etched until the mask film 14 is exposed to embed the lower-layer metal 22 and wiring 24 in the opening. An insulating film 26 is then formed on the first metallic film 18, and the second metallic film 28 is formed over the entire surface and photoetched to form the upper-layer metal 30 and a liq. crystal driving picture element electrode 32. Consequently, an MIM element without generating a leak current and with the upper-layer metal never broken is obtained.</p> |
