| 摘要 |
PURPOSE:To prevent a wafer from cracks by a method wherein energy beam scans for annealing are conducted in directions different from the direction of cleavage in a single crystal wafer. CONSTITUTION:A single crystal wafer 1 of a face direction (100) is fixed upon an X-Y platform and an angle theta is formed by an axis F-F at a right angle to a facet 3 and an axis X or Y. The axes X and Y are in the direction of <100>, a direction of difficult cleavage, when theta=45 deg.. Under such circumstances, the energy beam focus 7 scanning in the direction X or Y does not render the wafer easy to break during handling after treatment. The possibility of breakage is far less than after a beam application along the direction of <110>, a direction of easy cleavage, even when theta is chosen anywhere between 22.5 deg. and 67.5 deg.. By following this method, thermal distortion remaining in the wafer 2 does not lead to breakage, and therefore annealing and single crystallization can be effected can be effected at a fast pace. Accomplishing a same result is a scan conducted in a direction <100> intercepting at an angle theta the axis X or Y at a right angle to or in parallel with the facet 3. |
