| 摘要 |
PURPOSE:To obtain a precise Al pattern, by applying a mask on an Al layer by an energy-responsive resist, treating the mask by N2 plasma, and dry-etching Al with an N2 treated layer as a mask. CONSTITUTION:The energy responsive resist mask 13 (this mask is formed on the area to be etched) is applied on the Al layer 12 on an Si substrate 11. Then, N2 plasma 55 is applied and the N2 treated layer 54 is formed. N ion implantation may be used. Then, the resistmask is removed. Al 12 is dry-etched with the layer 54 as a mask by using the plasma of CCl4 gas, and the Al pattern is obtained. In this constitution, it is not necessary to apply the energy-responsive resist thickly as in a conventional method, and the scope of selecting the resist is expanded. Furthermore, the thickness of the N2 treated layer 54 is uniform and the abnormal side etching as in the case of SiO2 does not occur. |
