Fabricating electrical contacts in semiconductor devices.

摘要

A method of fabricating an electrical contact in a semiconductor device, the method comprising the steps of:- (a) providing on an underlying silicon substrate (2) a reflowable interlevel dielectric material (14) having a contact opening exposing a contact region of the silicon substrate; (b) heating the silicon substrate and the interlevel dielectric material by a rapid thermal anneal in an oxygen-containing atmosphere thereby to grow an oxide control layer (20) in the contact region and to reflow the dielectric material; (c) depositing a layer of transition metal (28) over the reflowed dielectric material and the control layer; and (d) converting at least part of the transition metal layer into a metallurgic barrier. t