| 发明名称 |
Method of manufacturing III-V group compound semiconductor device. |
| 摘要 |
<p>A magnesium-doped p-type III-V Group compound semiconductor layer can be formed by metal organic chemical vapor deposition, by reacting, in a vapor phase, at least one compound of a Group III element with at least one compound of a Group V element, in the presence of an adduct of an organic magnesium compound with another compound as a doping source of magnesium.</p> |
| 申请公布号 |
EP0403293(A2) |
申请公布日期 |
1990.12.19 |
| 申请号 |
EP19900306527 |
申请日期 |
1990.06.14 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
AKO, HATANO, C/O INTELLECTUAL PROPERTY DIVISION;IZUMIA, TOSHIHIDE, C/O INTELLECTUAL PROPERTY DIV.;OHBA, YASUO, C/O INTELLECTUAL PROPERTY DIVISION |
| 分类号 |
H01L21/205;H01L33/00;H01L33/06;H01L33/30;H01S5/223;H01S5/227;H01S5/30;H01S5/323 |
主分类号 |
H01L21/205 |
| 代理机构 |
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代理人 |
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| 地址 |
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