| 摘要 |
<p>A light sensor, adhesive type photoelectric conversion element comprises a first electrode layer (1), a second electrode layer (2), first (3) and second (4) photoconductive layers and a blocking layer (5). (2) can transmit light. (3), (4) and (5) are situated between (1) and (2). The function of (4) is to inject electric charge which is produced by changes of the electric characteristics of (3) and (5). (3) contains silicon as major component. The major component of (5) is a material having a band gap broader than that of amorphous silicon hydride and is mostly composed of silicon and carbon, silicon and nitrogen or silicon and oxygen. (4) contains, as major component, silicon to which an impurity of a Gp.III or V element is added. The amt. of injected electric charge can be controlled by adjusting the amt. of impurity in (4) between 1 ppm. and 10000 ppm., the thickness of (4) between 20 and 5000 Angstrom, the band gap of (5) between 1.7 eV and 6 eV and the thickness of (5) between 20 and 5000 Angstrom. (5) also contains as impurity a Gp.III or V element, the amt. of which can be adjusted between 0 and 1000 ppm. to control the amt. of the injected electric charge.</p> |
